| CMOS Design > MOS Modeling | |
Three main parameters are concerned by the sensitivity to temperature: the threshold voltage VTO, the mobility U0 and the slope in sub-threshold mode dependent on kT/q. Both VTO and U0 decrease when the temperature increases.
A higher temperature leads to a reduced mobility, as UTE is negative. Consequently, at a higher temperature, the current Ids is lowered.
Meanwhile, in an opposite trend, the threshold voltage is decreased. Therefore, there exists a remarkable operating point where the daring current is almost constant and independent of temperature variation. In 0.12µm CMOS, the Vds voltage with zero temperature coefficient (ZTC) is around 0.9V.
| 2 sensible parameters: KP(T) = KP(T0) (T- T0) e-1.5 VTO(T) = VTO(T0)-0.002 (T- T0) |
Physical aspect: carrier mobility degradation |
| CMOS Design > MOS Modeling > Temperature Effect | |